20V P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
AEC Qualified | No |
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Compliance (Only Automotive Supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 20 V |
|VGS| (±V) | 12 ±V |
|IDS| @TC = +25°C (A) | 150 |
PD @TA = +25°C (W) | 2.7 |
RDS(ON)Max@ VGS(10V)(mΩ) | 2.2 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 2.55 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 4 mΩ |
|VGS(TH)| Min (V) | 0.5 V |
|VGS(TH)| Max (V) | 1.4 V |
QG Typ @ |VGS| = 4.5V (nC) | 79 nC |
QG Typ @ |VGS| = 10V (nC) | 177 nC |
CISS Typ (pF) | 8352 pF |
CISS Condition @|VDS| (V) | 10 V |