Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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DMP2066UFDE

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 20V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity P
    ESD Diodes (Y|N) No
    |VDS| (V) 20 V
    |VGS| (±V) 12 ±V
    |IDS| @TA = +25°C (A) 6.2
    PD @TA = +25°C (W) 2.03
    RDS(ON)Max@ VGS(4.5V)(mΩ) 36 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 56 mΩ
    RDS(ON)Max@ VGS(1.8V)(mΩ) 75 mΩ
    |VGS(TH)| Min (V) 0.4 V
    |VGS(TH)| Max (V) 1.1 V
    QG Typ @ |VGS| = 4.5V (nC) 14.4 nC
    CISS Typ (pF) 1537 pF
    CISS Condition @|VDS| (V) 10 V

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC