P-CHANNEL ENHANCEMENT MODE MOSFET
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AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 20 V |
|VGS| (±V) | 8 ±V |
|IDS| @TA = +25°C (A) | 4.23 |
PD @TA = +25°C (W) | 1.64 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 60 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 90 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 113 mΩ |
|VGS(TH)| Min (V) | 0.5 V |
|VGS(TH)| Max (V) | 0.9 V |
QG Typ @ |VGS| = 4.5V (nC) | 7.6 nC |
CISS Typ (pF) | 727 pF |
CISS Condition @|VDS| (V) | 20 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2374 | 2018-12-07 | 2019-03-07 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Conversion to Palladium Coated Copper Bond Wire with New Molding Compound, and Qualification of Alternative Die Source on Select Products |
PCN-2340 | 2018-04-26 | 2018-05-26 | Qualification of Alternate Wafer Sources for Select MOSFET Products |