20V P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
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This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TC = +25°C (A) | 84 |
| PD @TA = +25°C (W) | 1.95 |
| PD @TC = +25°C (W) | 3.57 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 5.5 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 7 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 9 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1.3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 55 nC |
| QG Typ @ |VGS| = 10V (nC) | 123 nC |
| CISS Typ (pF) | 4777 pF |
| CISS Condition @|VDS| (V) | 10 V |
