30V P-Channel Enhancement Mode MOSFET
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This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 14 |
| |IDS| @TC = +25°C (A) | 71 |
| PD @TA = +25°C (W) | 3.3 |
| PD @TC = +25°C (W) | - |
| RDS(ON)Max@ VGS(10V)(mΩ) | 10 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 18 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | - mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | - mΩ |
| |VGS(TH)| Min (V) | 1 V |
| |VGS(TH)| Max (V) | 3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 56 nC |
| QG Typ @ |VGS| = 10V (nC) | 109 nC |
| CISS Typ (pF) | 5929 pF |
| CISS Condition @|VDS| (V) | 15 V |
