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DMPH1006UPS

12V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed

Application(s)

Notebook Battery Power Management
DC-DC Converters
Load Switch

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	12 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_C = +25°C (A)	80
P_D @T_A = +25°C (W)	3.2
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	6 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	8 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	72 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	124 (@8V) nC
C_ISS Typ (pF)	6334 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMPH1006UPS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2439	2019-12-05	2020-03-05	Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products