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DMPH16M1UPSW

12V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.

https://www.diodes.com/quality/product-definitions/

Application(s)

Notebook battery power managements
DC-DC converters
Load switches

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	12 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	96
P_D @T_A = +25°C (W)	1.95
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	6 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	8 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	75 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	164 nC
C_ISS Typ (pF)	5392 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMPH16M1UPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf