P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR
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| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P+SKY |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 2.9 |
| PD @TA = +25°C (W) | 1.5 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 95 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 120 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 150 mΩ |
| |VGS(TH)| Min (V) | 0.45 V |
| |VGS(TH)| Max (V) | 1.3 V |
| CISS Typ (pF) | 632 pF |
| CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
