Diodes Incorporated — Analog and discrete power solutions
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DMT12H090LFDF4

115V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Feature(s)

  • 0.4mm Profile—Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • 100% Unclamped Inductive Switching (UIS) Test in Production—Ensures More Reliable and Robust End Application
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • DC-DC Primary Switch
  • Load Switch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 115 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 3.4
PD @TA = +25°C (W) 1.6
RDS(ON)Max@ VGS(10V)(mΩ) 90 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 100 mΩ
|VGS(TH)| Max (V) 2.2 V
QG Typ @ |VGS| = 10V (nC) 6 nC
CISS Typ (pF) 251 pF
CISS Condition @|VDS| (V) 50 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf