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PowerDI5060-8.pngN-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 24 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TC = +25°C (A) | 80 |
| PD @TA = +25°C (W) | 3 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 5 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 6.5 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 10 mΩ |
| |VGS(TH)| Min (V) | 0.55 V |
| |VGS(TH)| Max (V) | 1.45 V |
| QG Typ @ |VGS| = 4.5V (nC) | 29.6 nC |
| QG Typ @ |VGS| = 10V (nC) | 53.7 nC |
| CISS Typ (pF) | 1683 pF |
| CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2439 | 2019-12-05 | 2020-03-05 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products |
| PCN-2403 | 2019-03-25 | 2019-06-19 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products. |
