Back to MOSFET Master Table

DMT3002LPS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

Contact Sales

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON), yet maintain superior switching performance. This device is ideal for use in power management and load switch.

Feature(s)

Thermally Efficient Package – Cooler Running Applications
<1.1mm Package Profile – Ideal for Thin Applications
High Conversion Efficiency
Low R_DS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed

Application(s)

DC-DC Converters
Load Switch

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_C = +25°C (A)	240
P_D @T_A = +25°C (W)	2.5
P_D @T_C = +25°C (W)	136
R_DS(ON)Max@ V_GS(10V)(mΩ)	1.6 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	2.5 mΩ
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	37 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	77 nC
C_ISS Typ (pF)	5000 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMT3002LPS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2628	2023-05-11	2023-08-11	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products