N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20, 16 ±V |
| |IDS| @TC = +25°C (A) | 30 |
| PD @TA = +25°C (W) | 2 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 11.1 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 13.8 mΩ |
| |VGS(TH)| Max (V) | 3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 6.4 nC |
| QG Typ @ |VGS| = 10V (nC) | 13.8 nC |
| CISS Typ (pF) | 748 pF |
| CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
| PCN-2402 | 2019-05-15 | 2019-08-15 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site and Conversion to Palladium Coated Copper Bond Wire with New Lead Frame Type on Select Products |
