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DMT31M1LPSW

30V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

100% Unclamped Inductive Switch (UIS) Test in Production
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-State Losses < 1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Body control electronics
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	40
\|I_DS\| @T_C = +25°C (A)	130
P_D @T_A = +25°C (W)	3
P_D @T_C = +25°C (W)	-
R_DS(ON)Max@ V_GS(10V)(mΩ)	0.95 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	1.5 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	- mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	- mΩ
\|V_GS(TH)\| Min (V)	1.3 V
\|V_GS(TH)\| Max (V)	2.3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	39 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	86 nC
C_ISS Typ (pF)	5938 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMT31M1LPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf