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DMT31M8LFVWQ

30V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low R_DS(ON)– Ensures On-State Losses Are Minimized
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
Wettable Flank for Improved Optical Inspection
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMT31M8LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Backlighting
Power-management functions
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	24
\|I_DS\| @T_C = +25°C (A)	138
P_D @T_A = +25°C (W)	3.5
P_D @T_C = +25°C (W)	-
R_DS(ON)Max@ V_GS(10V)(mΩ)	1.9 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	2.9 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	- mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	- mΩ
\|V_GS(TH)\| Min (V)	1.2 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	20.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	43.1 nC
C_ISS Typ (pF)	2979 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMT31M8LFVWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf