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DMT31M8LFVWQ

30V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.  

Feature(s)

  • Low RDS(ON) – Ensures On-State Losses Are Minimized
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
  • Wettable Flank for Improved Optical Inspection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMT31M8LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Backlighting
  • Power-management functions
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 24
|IDS| @TC = +25°C (A) 138
PD @TA = +25°C (W) 3.5
PD @TC = +25°C (W) -
RDS(ON)Max@ VGS(10V)(mΩ) 1.9 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 2.9 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) - mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) - mΩ
|VGS(TH)| Min (V) 1.2 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 20.3 nC
QG Typ @ |VGS| = 10V (nC) 43.1 nC
CISS Typ (pF) 2979 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf