65V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 65 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 16.7 |
| |IDS| @TC = +25°C (A) | 67.8 |
| PD @TA = +25°C (W) | 2.6 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 5.4 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 7.3 mΩ |
| |VGS(TH)| Max (V) | 2.5 V |
| QG Typ @ |VGS| = 4.5V (nC) | 28.9 nC |
| QG Typ @ |VGS| = 10V (nC) | 51.4 nC |
| CISS Typ (pF) | 2626 pF |
| CISS Condition @|VDS| (V) | 30 V |
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