60V N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
AEC Qualified | No |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TC = +25°C (A) | 75 |
PD @TA = +25°C (W) | 3.3 |
PD @TC = +25°C (W) | 96 |
RDS(ON)Max@ VGS(10V)(mΩ) | 10.5 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 15 mΩ |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 15.4 nC |
QG Typ @ |VGS| = 10V (nC) | 28.4 nC |
CISS Typ (pF) | 1406 pF |
CISS Condition @|VDS| (V) | 30 V |