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DMT69M9LPDW

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application(s)

Wireless Charging
DC-DC Converters
Power Management

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_A = +25°C (A)	11
P_D @T_A = +25°C (W)	2.5
R_DS(ON)Max@ V_GS(10V)(mΩ)	12.5 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	16.8 mΩ
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	15.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	33.5 nC

Technical Documents

SPICE Model

DMT69M9LPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile