Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

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DMTH10H071LFDFW

100V +175°C N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. The device is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: power-management functions, DC-DC converters, and backlighting.

Feature(s)

  • Rated to +175°C — Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production: Ensures More Reliable and Robust End Application
  • Low RDS(ON) — Ensures On-State Losses Are Minimized
  • 6mm Profile — Ideal for Low-Profile Applications
  • PCB Footprint of 4mm2
  • Sidewall Plated for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power-management functions
  • DC-DC converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 4.6
PD @TA = +25°C (W) 3
RDS(ON)Max@ VGS(10V)(mΩ) 68 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 116 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 3.4 nC
QG Typ @ |VGS| = 10V (nC) 6.4 nC
CISS Typ (pF) 296 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf