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DMTH10H071LFDFW

100V +175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. The device is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: power-management functions, DC-DC converters, and backlighting.

Feature(s)

Rated to +175°C — Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production: Ensures More Reliable and Robust End Application
Low R_DS(ON)— Ensures On-State Losses Are Minimized
6mm Profile — Ideal for Low-Profile Applications
PCB Footprint of 4mm²
Sidewall Plated for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

Power-management functions
DC-DC converters
Backlighting

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	4.6
P_D @T_A = +25°C (W)	3
R_DS(ON)Max@ V_GS(10V)(mΩ)	68 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	116 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	3.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	6.4 nC
C_ISS Typ (pF)	296 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMTH10H071LFDFW.spice.txt

Recommended Soldering Techniques

TN1.pdf