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DMTH41M3SPSW

40V 175°C N-Channel Enhancement Mode MOSFET

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This new generation n-channel enhancement mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance.

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON)– Minimizes Power Losses
< 1.1mm Package Profile – Ideal for Thin Applications
Wettable Flank for Improved Optical Inspection
Fast Switching Speed
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	40 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	-
\|I_DS\| @T_C = +25°C (A)	191
P_D @T_A = +25°C (W)	3.75
P_D @T_C = +25°C (W)	114
R_DS(ON)Max@ V_GS(10V)(mΩ)	1.7 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	- mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	- mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	- mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	- nC
Q_G Typ @ \|V_GS\| = 10V (nC)	61 nC
C_ISS Typ (pF)	5433 pF
C_ISS Condition @\|V_DS\| (V)	20 V

SPICE Model

DMTH41M3SPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf