Diodes Incorporated — Analog and discrete power solutions
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DMTH6016LFVW

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Small form factor thermally efficient package enables higher density end products
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under separate datasheet (DMTH6016LFVWQ)

Application(s)

  • Backlighting
  • Power-management functions
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 41
PD @TA = +25°C (W) 2.38
RDS(ON)Max@ VGS(10V)(mΩ) 16 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 27 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 7.3 nC
QG Typ @ |VGS| = 10V (nC) 15.1 nC
CISS Typ (pF) 939 pF
CISS Condition @|VDS| (V) 30 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf