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DMTH63M5LFG

60V +175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Rated to +175°C — Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
Low R_DS(ON)—Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

Synchronous rectification
Motor controls
DC-DC converters
Power management

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	90.3
P_D @T_A = +25°C (W)	3.4
P_D @T_C = +25°C (W)	63.3
R_DS(ON)Max@ V_GS(10V)(mΩ)	4 mΩ
\|V_GS(TH)\| Min (V)	1.3 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 10V (nC)	41.2 nC
C_ISS Typ (pF)	2378 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMTH63M5LFG.spice.txt

Recommended Soldering Techniques

TN1.pdf