Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI5060-8.png
Back to MOSFET Master Table

DMTH8008LPS

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switches.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • High-Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DMTH8008LPSQ)

Application(s)

  • DC-DC converters
  • Load switches

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 80 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 91
PD @TA = +25°C (W) 3
PD @TC = +25°C (W) 100
RDS(ON)Max@ VGS(10V)(mΩ) 7.8 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 11 mΩ
|VGS(TH)| Max (V) 2.8 V
QG Typ @ |VGS| = 4.5V (nC) 21.7 nC
QG Typ @ |VGS| = 10V (nC) 41.2 nC
CISS Typ (pF) 2345 pF
CISS Condition @|VDS| (V) 40 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2439 2019-12-05 2020-03-05 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold
Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products