Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

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DMTH8012LK3

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • Low RDS(ON) – Ensures On-State Losses Are Minimized
  • High Conversion Efficiency
  • Low Input Capacitance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DMTH8012LK3Q)

Application(s)

  • Synchronous rectifiers
  • Backlighting
  • Power-management functions
  • DC-DC converters

Specifications & Technical Documents

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 80 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 50
PD @TA = +25°C (W) 2.6
PD @TC = +25°C (W) 119
RDS(ON)Max@ VGS(10V)(mΩ) 16 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 21 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 15 nC
QG Typ @ |VGS| = 10V (nC) 34 nC
CISS Typ (pF) 1949 pF
CISS Condition @|VDS| (V) 40 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity