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DMWSH120H23SM3

1200V N-Channel Silicon Carbide

Datasheet

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Description

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
High BV_DSSRating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

SMPS (switching mode power supplies)
UPS (uninterruptable power supplies)
Energy storages
EV charging systems
Solar inverters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	1200 V
\|V_GS\| (±V)	18, 4 ±V
\|I_DS\| @T_C = +25°C (A)	100
P_D @T_C = +25°C (W)	349
R_DS(ON)Max@ V_GS(10V)(mΩ)	23 (@ 18V) mΩ
\|V_GS(TH)\| Min (V)	1.8 V
\|V_GS(TH)\| Max (V)	3.6 V
Q_G Typ @ \|V_GS\| = 10V (nC)	217 (@ 18V) nC
C_ISS Typ (pF)	3962 pF
C_ISS Condition @\|V_DS\| (V)	1000 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf