Diodes Incorporated — Analog and discrete power solutions
Back to Transistor (BJT) Master Table

DXTN07060BFG

NPN, 60V, 3A, PowerDI3333-8

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

100V NPN HIGH PERFORMANCE TRANSISTOR IN PowerDI3333-8

Feature(s)

  • BVCEO > 100V
  • Small Form Factor Thermally Efficient Package. Enables Higher Density End Products
  • IC = 2A High Continuous Current
  • ICM = 6A Peak Pulse Current
  • Low Saturation Voltage VCE(SAT) < 250mV @ 1A
  • Complementary PNP Type: DXTP07100BFG
  • Rated to +175°C–Ideal for High Temperature Environment
  • Wettable Flank for Improved Optical Inspection

Application(s)

  • Load Switch
  • Linear Regulator
  • MOSFET or IGBT Gate Driving

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN
VCEO, VCES (V) 60
IC (A) 3
ICM (A) 6
PD (W) 2.1
hFE (Min) 100
hFE (@ IC) (A) 0.5
hFE(Min 2) 80
hFE (@ IC2) (A) 1
VCE(sat) Max (mV) 250
VCE(SAT) (@ IC/IB) (A/mA) 1/100
VCE(sat) (Max.2) (mV) 500
VCE(sat) (@ IC/IB2) (A/mA) 3/300
fT (MHz) 175

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC