NPN, 60V, 5.5A, SOT223
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
A proprietary structure is used in achieving ultra-low VCE(sat) performance and reduced operating temperature. This has the benefit of reducing thermal management requirements and increasing long-term reliability.
Category | Ultra Low Saturation Transistor |
---|---|
Compliance(Only Automotive supports PPAP) | Standard |
Polarity | NPN |
VCEO, VCES (V) | 60 |
IC (A) | 5.5 |
ICM (A) | 12 |
PD (W) | 2 |
hFE (Min) | 250 |
hFE (@ IC) (A) | 0.1 |
hFE(Min 2) | 200 |
hFE (@ IC2) (A) | 2 |
VCE(sat) Max (mV) | 110 |
VCE(SAT) (@ IC/IB) (A/mA) | 2/40 |
VCE(sat) (Max.2) (mV) | 230 |
VCE(sat) (@ IC/IB2) (A/mA) | 5.5/150 |
fT (MHz) | 200 |
RCE(sat) (mΩ) | 25 |
Spice Model | Yes |