PNP, 100V, 2A, PowerDI3333-8
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100V PNP HIGH PERFORMANCE TRANSISTOR IN POWERDI3333-8
• BVCEO > -100V
• Small Form Factor Thermally Efficient Package.
• Enables Higher Density End Products
• IC = -2A High Continuous Current
• ICM = -6A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < -250mV @ -1A
• Complementary NPN Type: DXTN07100BFG
• Rated to +175°C—Ideal For High Temperature Environment
• Wettable Flank For Improved Optical Inspection
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• High Side Switch
• MOSFET or IGBT Gate Driving
| Category | Medium Power Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Standard |
| Polarity | PNP |
| VCEO, VCES (V) | 100 |
| IC (A) | 2 |
| ICM (A) | 6 |
| PD (W) | 2.1 |
| hFE (Min) | 100 |
| hFE (@ IC) (A) | 0.5 |
| hFE(Min 2) | 55 |
| hFE (@ IC2) (A) | 1 |
| VCE(sat) Max (mV) | 250 |
| VCE(SAT) (@ IC/IB) (A/mA) | 1/100 |
| VCE(sat) (Max.2) (mV) | 500 |
| VCE(sat) (@ IC/IB2) (A/mA) | 2/200 |
| fT (MHz) | 140 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2691 | 2024-08-16 | 2024-11-14 | Additional Wafer Sources and Transfer of Wafer Manufacturing Site for Select Discrete Products |
