1A SBR SUPER BARRIER RECTIFIER
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Packaged in the compact SOD523 package, the SBR1A20T5 provides very low VF and excellent reverse leakage stability at high temperatures.
Patented SBR Technology Provides Superior Avalanche Capability Versus Schottky Diodes, Ensuring More Rugged and Reliable End Applications
Reduced Ultra-Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation
Reduced High Temperature Reverse Leakage; Increased Reliability Against Thermal Runaway Failure in High Temperature Operation
Low Profile Package – Ideal for Thin Applications
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
| @ TerminalTemperature TT (ºC) | - |
|---|---|
| AEC Qualified | Yes |
| Compliance (Only Automotive supports PPAP) | Standard |
| Configuration | Single |
| Maximum Average Rectified Current IO (A) | 1 |
| Peak Repetitive Reverse Voltage VRRM (V) | 20 |
| Peak Forward Surge Current IFSM (A) | 10 |
| Forward VoltageDrop VF(V) | 0.52 |
| @ IF (A) | 1 |
| Maximum Reverse Current IR (μA) | 200 |
| @ VR (V) | 20 |
| Reverse Recovery Time trr (ns) | 15 |
| Total Capacitance CT (pF) | 19 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2687 | 2024-05-29 | 2024-08-29 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site with New Mold Compound Type for Select Discrete Products |
| PCN-2660 | 2024-03-13 | 2024-06-13 | Qualification of Additional Wafer Source with Wafer Diameter and Mold Compound Changes for Select Discrete Products |
