Diodes Incorporated
PowerDI123

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SBR2A40P1

SBR

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Feature(s)

  • Low-Forward Voltage Drop
  • Low-Leakage Current
  • Superior Reverse Avalanche Capability
  • Excellent High-Temperature Stability
  • Patented Interlocking Clip Design for High-Surge Current Capacity
  • Patented Super Barrier Rectifier Technology (SBR®)
  • Soft, Fast Switching Capability
  • +150°C Operating Junction Temperature
  • ±16kV ESD Protection (HBM, 3B)
  • ±25kV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under separate datasheet (SBR2A40P1Q)

Product Specifications

Product Parameters

@ TerminalTemperature TT (ºC) 50
AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
Maximum Average Rectified Current IO (A) 2
Peak Repetitive Reverse Voltage VRRM (V) 40
Peak Forward Surge Current IFSM (A) 75
Forward VoltageDrop VF(V) 0.5
@ IF (A) 2
Maximum Reverse Current IR (μA) 100
@ VR (V) 40
Reverse Recovery Time trr (ns) -
Total Capacitance CT (pF) -

Related Content

Packages

Technical Documents

SPICE Model

Application Notes

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2660 2024-03-13 2024-06-13 Qualification of Additional Wafer Source with Wafer Diameter and Mold Compound Changes for Select Discrete Products