Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOD123F.png2A SUPER BARRIER RECTIFIER
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The SBR2M60S1F is a single rectifier packaged in SOD123F, offering very low forward voltage drop (VF) and excellent low reverse leakage stability at high temperatures.
| @ TerminalTemperature TT (ºC) | - |
|---|---|
| AEC Qualified | Yes |
| Compliance (Only Automotive supports PPAP) | Standard |
| Configuration | Single |
| Maximum Average Rectified Current IO (A) | 2 |
| Peak Repetitive Reverse Voltage VRRM (V) | 60 |
| Peak Forward Surge Current IFSM (A) | 30 |
| Forward VoltageDrop VF(V) | 0.7 |
| @ IF (A) | 2 |
| Maximum Reverse Current IR (μA) | 0.8 |
| @ VR (V) | 60 |
| Reverse Recovery Time trr (ns) | - |
| Total Capacitance CT (pF) | - |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2660 | 2024-03-13 | 2024-06-13 | Qualification of Additional Wafer Source with Wafer Diameter and Mold Compound Changes for Select Discrete Products |
| PCN-2588 | 2022-06-01 | 2022-09-01 | Qualification of Additional Clip Bonding, Lead Frame Structure (Matrix) and Mold Compound, and Qualification of Additional Diodes Internal Assembly & Test Site (SSEC) for Select Discrete Products |
| PCN-2398 | 2019-05-21 | 2019-08-21 | Transfer Assembly Lines to Eris Assembly Site (Plant 2) in Taoyuan, Taiwan from the Existing Assembly Site (Plant 1) in Taipei City, Taiwan for Select Discrete Products |
