T12M35T800HC(LS): Triacs Silicon Bidirectional Thyristors (Thyristors)

Feature(s)

High di/dt(c) over 18A/ms
Three-quadrants triggering Triac
150°C Operation temperature
Over 800V V_DRM/V_RRM
Low triggering level VGT/IGT and Low holding current characteristics
Isolated mounting base package
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Compliance (Only Automotive Supports PPAP)	Standard
Junction Temperature (°C)	150
AEC Qualified	No
Configuration	Bi-Directional
Type	TRIAC
Peak Repetitive Off-State VoltageVDRM / RRM (V)	800 V
On-State RMS Current(RMS)IT(RMS) (A)	12 A
Peak On-State Voltage MaxVTM Max(V)	1.5 V
Gate Trigger Current MaxIGT MAX (mA)	35 mA
Peak Repetitive Forward Current MaxIDRM Max (uA)	5 uA
Peak Non-Repetitive Surge CurrentITRM / ITSM (A)	100 A
Holding Current MaxIH Max (mA)	50 mA

Recommended Soldering Techniques

TN1.pdf