Diodes Incorporated
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T8M30T800HC(LS)

Silicon Bi-Directional Thyristors

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Feature(s)

  • Passivated die for reliability and uniformity
  • Three-quadrant triggering
  • Blocking voltage to 800V
  • Low level triggering and holding characteristics
  • Pb-free package
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
AEC Qualified No
TJ MAX (°C) 150 °C
ITRMS(A) 8 A
IBO Max (mA) N/A mA
VTM Max(V) 1.5 V
VBO MAX(V) N/A V
IGT MAX (mA) 30 mA
IDRM MAX (uA) 5 uA
ITRM / ITSM (A) 80 A
IH Max (mA) 35 mA
VDRM MAX(V) 700 V
VDRM / RRM (V) 800 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf