Diodes Incorporated — Analog and discrete power solutions
Back to Transistor (BJT) Master Table

ZX5T851GQ

NPN, 60V, 6A, SOT223

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

  • BVCEO > 60V
  • IC = 6A High Continuous Collector Current
  • ICM = 20A Peak Pulse Current
  • Low Saturation Voltage VCE(sat) < 60mV @ 1A
  • RSAT = 35mΩ for a Low Equivalent On-Resistance
  • hFE Specified up to 10A for High Gain Hold-Up
  • Complementary PNP Type: ZX5T951GQ
  • Lead-Free Finish; RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device 
  • The ZX5T851GQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Emergency Lighting Circuits
  • MOSFET & IGBT Gate Drivers
  • Solenoid, Relay and Actuator Drivers
  • DC Modules
  • Motor Control

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 60
IC (A) 6
ICM (A) 20
PD (W) 3
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 55
hFE (@ IC2) (A) 5
VCE(sat) Max (mV) 30
VCE(SAT) (@ IC/IB) (A/mA) 0.1/5
VCE(sat) (Max.2) (mV) 135
VCE(sat) (@ IC/IB2) (A/mA) 2/50
fT (MHz) 130
RCE(sat) (mΩ) 35

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC