NPN, 60V, 5A, SOT89
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This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
| Category | Low Saturation Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Automotive |
| Polarity | NPN |
| VCEO, VCES (V) | 60 |
| IC (A) | 5 |
| ICM (A) | 10 |
| PD (W) | 2.4 |
| hFE (Min) | 100 |
| hFE (@ IC) (A) | 0.01 |
| hFE(Min 2) | 45 |
| hFE (@ IC2) (A) | 2 |
| VCE(sat) Max (mV) | 90 |
| VCE(SAT) (@ IC/IB) (A/mA) | 1/50 |
| VCE(sat) (Max.2) (mV) | 230 |
| VCE(sat) (@ IC/IB2) (A/mA) | 4/400 |
| fT (MHz) | 185 |
| RCE(sat) (mΩ) | 48 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2639 | 2023-09-26 | 2023-12-26 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products |
| PCN-2324 | 2018-02-28 | 2018-05-28 | Addition of A Passivation Layer Over The Top Metal of The Die for Selected Automotive BJT Devices |
