ZXTP2009ZQ

PNP, 40V, 5.5A, SOT89

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This bipolar junction transistor (BJT) is designed to meet the stringent requirement of automotive applications.

BV_CEO > -40V
I_C = -5.5A Continuous Collector Current
I_CM = -15A Peak Pulse Current
Very Low Saturation Voltage VCE(SAT) < -60mV max @ -1A
R_SAT = 29mΩ @ -5.5A for Low Equivalent On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The ZXTP2009ZQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Category	Low Saturation Transistor
Compliance(Only Automotive supports PPAP)	Automotive
Polarity	PNP
VCEO, VCES (V)	40
IC (A)	5.5
ICM (A)	15
PD (W)	2.1
hFE (Min)	200
hFE (@ IC) (A)	0.01
h_FE(Min 2)	110
hFE (@ IC2) (A)	5.5
VCE(sat) Max (mV)	30
V_CE(SAT) (@ IC/IB) (A/mA)	0.1/10
VCE(sat) (Max.2) (mV)	175
VCE(sat) (@ IC/IB2) (A/mA)	2/40
fT (MHz)	152
RCE(sat) (mΩ)	29

SPICE Model

ZXTP2009ZQ.spice.txt

Recommended Soldering Techniques

TN1.pdf