Diodes Incorporated — Analog and discrete power solutions
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ZXTP2012ZQ

PNP, 60V, 4.3A, SOT89

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Feature(s)

  • BVCEO > -60V
  • IC = -4.3A High Continuous Current
  • RSAT = 32mΩ for a Low Equivalent On-Resistance
  • Low Saturation Voltage VCE(sat) < -65mV @ IC = -1A
  • hFE Specified up to -10A for High Current Gain Hold up
  • Complementary NPN Type: ZXTN2010ZQ
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • The ZXTP2012ZQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Automotive
Category Low Saturation Transistor
Polarity PNP
VCEO, VCES (V) 60
IC (A) 4.3
ICM (A) 15
PD (W) 2.1
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 45
hFE (@ IC2) (A) 5
VCE(sat) Max (mV) 20
VCE(SAT) (@ IC/IB) (A/mA) 0.1/10
VCE(sat) (Max.2) (mV) 110
VCE(sat) (@ IC/IB2) (A/mA) 2/200
fT (MHz) 120

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

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