40V MOSFET Delivers Efficiency Gains for Electric Vehicles
By Ian Moulding, Automotive Discrete Marketing Manager
Right now, the automotive industry is going through a big transformation as it rapidly shifts from internal combustion engines to battery-powered electric vehicles (EVs). Governments around the world are passing ever-stricter regulations and requiring lower emissions, with EVs providing the only way to hit these targets.
This shift is creating new demands for power electronics in the automotive sector, including charging systems, engine management systems, converters, and motor drivers. Across all these applications, designers demand better efficiency from power components. By minimizing losses, they can improve the range of the vehicle, which is a vital differentiator for car buyers. Better efficiency also reduces the heat dissipated by components, thus enabling more compact designs and reducing thermal problems such as decreased reliability.
As well as efficiency, engineers are also looking for compact components with a small footprint, helping them to create high-power-density designs. Additionally, any devices used in vehicles need to be able to work reliably in harsh conditions and must be qualified to the appropriate automotive standards.
To help meet these automotive requirements, Diodes Incorporated has introduced the DMTH4M70SPGWQ, a 40V MOSFET that provides excellent efficiency. It is the first MOSFET announced by Diodes in its new PowerDI®8080-5 package; a high-current, thermally efficient package. The MOSFET is aimed at applications such as high-power BLDC motor drivers, high-power DC-DC converters, power steering, and charging systems.
The new MOSFET achieves the lowest figure of merit of any automotive-compliant 40V MOSFET in the PowerDI®8080-5 package. This enables higher power density and more efficient designs than those using competitor solutions.
The DMTH4M70SPGWQ features a typical RDS(ON) of just 0.54mΩ at a gate drive of 10V, while its gate charge is 117nC. This industry-leading performance maximizes system efficiency while ensuring power dissipation and switching losses are kept to an absolute minimum.
The MOSFET is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. It is rated to +175°C, making it ideal for high ambient temperature environments. Its gull-wing leads facilitate optical inspection (AOI), as well as improving high-temperature cycling reliability.
It has a PCB footprint of just 64mm2, which is 40% less than that of the TO263 (D2PAK) package format. It also has an off-board profile of 1.7mm, which is 63% lower than that of a TO263.
The copper clip bonding between the die and the terminals enables a low junction-to-case thermal resistance of 0.36°C/W. This allows the PowerDI 8080-5 package to handle drain currents up to 460A and deliver a power density that is eight times greater than a TO263 package. The clip design also reduces parasitic inductance and improves electromagnetic interference (EMI) performance.
As the automotive industry rapidly shifts towards its EV future, the DMTH4M70SPGWQ enables the high-power-density designs that deliver the greatest efficiency for battery-powered vehicles.
Automotive-compliant - AEC qualified, manufactured in IATF 16949 certified sites supporting PPAP documentation.
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