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BAS521Q

HIGH VOLTAGE SWITCHING DIODE

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Feature(s)

  • Fast Switching Speed: max. 50 ns
  • High Reverse Breakdown Voltage: 300V
  • Low Leakage Current: 100nA at room temperature
  • Ultra Small Plastic SMD Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Automotive
Configuration Single
Polarity Anode, Cathode
Power Rating(mW) 325 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 300 V
Reverse RecoveryTime trr (ns) 50 ns
Maximum Average Rectifier Current IO (mA) 250 mA
Maximum Peak Forward Surge Current IFSM (A) 4.5 A
Forward Voltage Drop VF @ IF (mA) 1.1 mA
Maximum ReverseCurrent IR (µA) 0.15 µA
TotalCapacitance CT (pF) 5 pF
VF(V) Max @ IF=100mA 1
V(BR)R (V) Min @IR=100μA 300
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 50
Maximum Reverse Current IR @ VR (V) 300 V
IR(uA) Max @ VR=80V 150nA@250V
CT(pF) Max @ VR = 0V, f = 1MHz 5

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2629 2023-05-15 2023-11-15 Device End of Life (EOL) - Automotive
PCN-2545 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Automotive Products
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)
PCN-2319 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Automotive Products Due to Closure of Diodes FabTech (KFAB) Facility