Inactive Datasheet Archive
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive supports PPAP) | No |
---|---|
CISS Condition @|VDS| (V) | 50 |
CISS Typ (pF) | 351 |
ESD Diodes (Y|N) | No |
|IDS| @TA = +25°C (A) | 4.6 |
|IDS| @TC = +25°C (A) | N/A |
PD @TA = +25°C (W) | 41 |
PD @TC = +25°C (W) | N/A |
Polarity | N |
QG Typ @ |VGS| = 10V (nC) | 13.9 |
QG Typ @ |VGS| = 4.5V (nC) | N/A |
AEC Qualified | No |
RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
RDS(ON)Max@ VGS(10V)(mΩ) | 1.3 |
RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
RDS(ON)Max@ VGS(4.5V)(mΩ) | N/A |
|VDS| (V) | 700 |
|VGS| (±V) | 30 |
|VGS(TH)| Max (V) | 4 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2389 | 2019-02-05 | 2019-08-05 | Device End of Life |