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DMT15H053SPSW

150V N-Channel Enhancement Mode MOSFET

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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power-management applications.

100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Thermally Efficient Package-Cooler Running Applications
Low R_DS(ON)– Minimizes On-State Losses
Low Q_g – Minimizes Switching Losses
< 1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
An automotive-compliant part is available under separate datasheet (DMT15H053SPSWQ)

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	150 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	24
P_D @T_A = +25°C (W)	3.3
P_D @T_C = +25°C (W)	90
R_DS(ON)Max@ V_GS(10V)(mΩ)	66 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	11.5 nC
C_ISS Typ (pF)	814 pF
C_ISS Condition @\|V_DS\| (V)	75 V

SPICE Model

DMT15H053SPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf