Diodes Incorporated — Analog and discrete power solutions
X3 DFN0603 2

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X3-DFN0603-2

X3 DFN0603 2

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X3-DFN0603-2

X3 DFN0603 2

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X3-DFN0603-2

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1SS361LP3

Switching Diode

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Specifications & Technical Documents

Product Parameters

AEC Qualified No
Compliance (Only Automotive Supports PPAP) Standard
Configuration Single
Polarity Anode, Cathode
Power Rating(mW) 250 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 85 V
Reverse RecoveryTime trr (ns) 4 ns
Maximum Average Rectifier Current IO (mA) 100 mA
Maximum Peak Forward Surge Current IFSM (A) 2 A
Forward Voltage Drop VF @ IF (mA) 100, 1.23 mA
Maximum ReverseCurrent IR (µA) 1 µA
TotalCapacitance CT (pF) 3 pF
VF(V) Max @ IF=100mA 1
V(BR)R (V) Min @IR=100μA 80
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 4
Maximum Reverse Current IR @ VR (V) 80 V
IR(uA) Max @ VR=80V 1
CT(pF) Max @ VR = 0V, f = 1MHz 3

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site