COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
N-Channel: 1.0V max
P-Channel: -1.0V max
AEC Qualified | No |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 20, 20 V |
|VGS| (±V) | 8, 8 ±V |
|IDS| @TA = +25°C (A) | 0.48, 0.35 |
PD @TA = +25°C (W) | 0.35 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 990, 1900 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 1200, 2400 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 1800, 3400 mΩ |
|VGS(TH)| Min (V) | 0.4, 0.4 V |
|VGS(TH)| Max (V) | 1.0, 1.0 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.35, 0.3 nC |
CISS Typ (pF) | 21.5, 17 pF |
CISS Condition @|VDS| (V) | 16, 15 V |