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DMG4N60SK3 (Obsolete)

Inactive Datasheet Archive

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switch (UIS) Test in Production
Low Gate Input Resistance
Low Input Capacitance

Application(s)

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	No
C_ISS Condition @\|V_DS\| (V)	25
C_ISS Typ (pF)	532
ESD Diodes (Y\|N)	No
\|I_DS\| @T_A = +25°C (A)	N/A
\|I_DS\| @T_C = +25°C (A)	3.7
P_D @T_A = +25°C (W)	N/A
P_D @T_C = +25°C (W)	48
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	14.3
Q_G Typ @ \|V_GS\| = 4.5V (nC)	N/A
AEC Qualified	No
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	N/A
R_DS(ON)Max@ V_GS(10V)(mΩ)	2300
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	N/A
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	N/A
\|V_DS\| (V)	600
\|V_GS\| (±V)	30
\|V_GS(TH)\| Max (V)	4.5

Technical Documents

SPICE Model

DMG4N60SK3.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2389	2019-02-05	2019-08-05	Device End of Life