Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

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DMG4N60SK3 (Obsolete)

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low Gate Input Resistance
  • Low Input Capacitance

Application(s)

  • Motor Control
  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive supports PPAP) No
CISS Condition @|VDS| (V) 25
CISS Typ (pF) 532
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) N/A
|IDS| @TC = +25°C (A) 3.7
PD @TA = +25°C (W) N/A
PD @TC = +25°C (W) 48
Polarity N
QG Typ @ |VGS| = 10V (nC) 14.3
QG Typ @ |VGS| = 4.5V (nC) N/A
AEC Qualified No
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 2300
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) N/A
|VDS| (V) 600
|VGS| (±V) 30
|VGS(TH)| Max (V) 4.5

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity