100V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 100 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 6 |
PD @TA = +25°C (W) | 1.9 |
RDS(ON)Max@ VGS(10V)(mΩ) | 33 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 50 mΩ |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 6.3 nC |
QG Typ @ |VGS| = 10V (nC) | 11.9 nC |
CISS Typ (pF) | 683 pF |
CISS Condition @|VDS| (V) | 50 V |