Diodes Incorporated — Analog and discrete power solutions
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DMN2016UFX

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 24 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 9.9
PD @TA = +25°C (W) 2.23
RDS(ON)Max@ VGS(4.5V)(mΩ) 15 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 20 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 14 nC
CISS Typ (pF) 950 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf