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DMN3732UVT

Dual N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under separate datasheet (DMN3732UVTQ)

Application(s)

Backlighting
DC-DC converters
Power-management functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	1.1
P_D @T_A = +25°C (W)	0.8
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	460 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	560 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	730 mΩ
\|V_GS(TH)\| Min (V)	0.45 V
\|V_GS(TH)\| Max (V)	0.95 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.9 nC
C_ISS Typ (pF)	40.8 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN3732UVT.spice.txt

Recommended Soldering Techniques

TN1.pdf