Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

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DMN4036LK3

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power management functions
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 40 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 8.5
    PD @TA = +25°C (W) 4.1
    RDS(ON)Max@ VGS(10V)(mΩ) 36 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 61 mΩ
    |VGS(TH)| Max (V) 3 V
    QG Typ @ |VGS| = 4.5V (nC) 4.9 nC
    QG Typ @ |VGS| = 10V (nC) 9.2 nC
    CISS Typ (pF) 453 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC