DMN61D9UT (Obsolete)

Alternative Part: DMN62D2UT

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV

Application(s)

Motor Control
Power Management Functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	Standard
C_ISS Condition @\|V_DS\| (V)	30
C_ISS Typ (pF)	28.5
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	Yes
\|I_DS\| @T_A = +25°C (A)	0.35
P_D @T_A = +25°C (W)	0.26
Polarity	N
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.4
AEC Qualified	No
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	3500
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	2500
\|V_DS\| (V)	60
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	1

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2579	2022-08-29	2023-02-28	Device End of Life (EOL)