P-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is qualified to AEC-Q101, supported by a PPAP.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 12 V |
|VGS| (±V) | 6 ±V |
|IDS| @TA = +25°C (A) | 13 |
|IDS| @TC = +25°C (A) | 19 |
PD @TA = +25°C (W) | 1.05 |
PD @TC = +25°C (W) | 2.16 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 11.7 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 18.6 mΩ |
|VGS(TH)| Min (V) | 0.6 V |
|VGS(TH)| Max (V) | 1.2 V |
QG Typ @ |VGS| = 4.5V (nC) | 7.1 nC |
CISS Typ (pF) | 913 pF |
CISS Condition @|VDS| (V) | 6 V |