20V P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switches.
• Load Switches
• Power Management Functions
AEC Qualified | No |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 20 V |
|VGS| (±V) | 10 ±V |
|IDS| @TC = +25°C (A) | 90 |
PD @TA = +25°C (W) | 2.76 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 6 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 8 mΩ |
|VGS(TH)| Min (V) | 0.4 V |
|VGS(TH)| Max (V) | 1 V |
QG Typ @ |VGS| = 4.5V (nC) | 75 nC |
QG Typ @ |VGS| = 10V (nC) | 164 nC |
CISS Typ (pF) | 5392 pF |
CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |